Optical studies of bulk and homoepitaxial films of III-V nitride semiconductorsFREITAS, Jaime A.Journal of crystal growth. 2005, Vol 281, Num 1, pp 168-182, issn 0022-0248, 15 p.Conference Paper

Bulk Nitride Workshop. The international workshop on bulk semiconductors IIIFREITAS, Jaime A; SITAR, Zlatko.Journal of crystal growth. 2005, Vol 281, Num 1, issn 0022-0248, 204 p.Conference Proceedings

Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV (IWBNS): 17-22 October 2006, Makino, Shiga, JapanFREITAS, Jaime A; HANSER, Drew; KOUKITOU, Akinori et al.Journal of crystal growth. 2007, Vol 305, Num 2, issn 0022-0248, 124 p.Conference Proceedings

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopyKIM, Hong-Yeol; KIM, Jihyun; FREITAS, Jaime A et al.Applied surface science. 2013, Vol 270, pp 44-48, issn 0169-4332, 5 p.Article

Residual impurities in GaN substrates and epitaxial layers grown by various techniquesMURTHY, Madhu; FREITAS, Jaime A; KIM, Jihyun et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 393-398, issn 0022-0248, 6 p.Conference Paper

Crystal polarity role in Mg incorporation during GaN solution growthFREITAS, Jaime A; FEIGELSON, Boris N; ANDERSON, Travis J et al.Journal of crystal growth. 2014, Vol 403, pp 90-95, issn 0022-0248, 6 p.Conference Paper

8th International Workshop on Bulk Nitrides Semiconductors (IWBNS VIII)FREITAS, Jaime A; MEISSNER, Elke; PASKOVA, Tanya et al.Journal of crystal growth. 2014, Vol 403, issn 0022-0248, 131 p.Conference Proceedings

Bulk nitride growth and related techniques. International Specialist Meeting, Foz do Iguaç´u, Brazil, 12-16 November 2000KUECH, T. F; BABCOCK, S. E; FREITAS, Jaime A et al.Journal of crystal growth. 2001, Vol 231, Num 3, issn 0022-0248, 124 p.Conference Proceedings

The Proceedings of the International Workshop on Bulk Nitride Semiconductors V (IWBNS5)FREITAS, Jaime A; HANSER, Drew; DA SILVA, Antonio F et al.Journal of crystal growth. 2008, Vol 310, Num 17, issn 0022-0248, 129 p.Conference Proceedings

TEM studies of GaN layers grown in non-polar direction : Laterally overgrown and pendeo-epitaxial layersLILIENTAL-WEBER, Z.Journal of crystal growth. 2008, Vol 310, Num 17, pp 4011-4015, issn 0022-0248, 5 p.Conference Paper

Cubic III-nitrides-a key to understand radiative recombination in nitride heterostructures?LISCHKA, K.Journal of crystal growth. 2001, Vol 231, Num 3, pp 415-419, issn 0022-0248Conference Paper

Linear optical response of zinc-blende and wurtzite III-N (III = B, Al, Ga, and In)PERSSON, C; FERREIRA DA SILVA, A.Journal of crystal growth. 2007, Vol 305, Num 2, pp 408-413, issn 0022-0248, 6 p.Conference Paper

Prospects for the ammonothermal growth of large GaN crystalFUKUDA, Tsuguo; EHRENTRAUT, Dirk.Journal of crystal growth. 2007, Vol 305, Num 2, pp 304-310, issn 0022-0248, 7 p.Conference Paper

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradientFEIGELSON, B. N; HENRY, R. L.Journal of crystal growth. 2005, Vol 281, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

Growth of thick AlN layers by hydride vapor-phase epitaxyKUMAGAI, Yoshinao; YAMANE, Takayoshi; KOUKITU, Akinori et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 62-67, issn 0022-0248, 6 p.Conference Paper

Identification of donors, acceptors, and traps in bulk-like HVPE GaNLOOK, D. C; FANG, Z.-Q; CLAFLIN, B et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 143-150, issn 0022-0248, 8 p.Conference Paper

Thermodynamic analysis of AlGaN HVPE growthKOUKITU, Akinori; KIKUCHI, Jun; KANGAWA, Yoshihiro et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 47-54, issn 0022-0248, 8 p.Conference Paper

Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxyYAMANE, Keisuke; HASHIMOTO, Yasuhiro; OKADA, Narihito et al.Journal of crystal growth. 2014, Vol 403, pp 55-58, issn 0022-0248, 4 p.Conference Paper

Metastable nature of InN and In-rich InGaN alloysIVANOV, S. V; SHUBINA, T. V; KOMISSAROVA, T. A et al.Journal of crystal growth. 2014, Vol 403, pp 83-89, issn 0022-0248, 7 p.Conference Paper

Optical and magnetic resonance studies of Be-doped GaN bulk crystalsGLASER, E. R; FREITAS, J. A; STORM, D. F et al.Journal of crystal growth. 2014, Vol 403, pp 119-123, issn 0022-0248, 5 p.Conference Paper

Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphireLEE, Sung-Nam; KIM, Jihoon; KIM, Hyunsoo et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 19-22, issn 0022-0248, 4 p.Conference Paper

Growth of p-CdTe thin films on n-GaN/sapphireJUNG, Younghun; CHUN, Seunju; KIM, Donghwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 69-72, issn 0022-0248, 4 p.Conference Paper

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substratesKIM, Byung-Jae; KIM, Hong-Yeol; KIM, Jihyun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 205-207, issn 0022-0248, 3 p.Conference Paper

Photo-enhanced chemical etched GaN LED on silicon substrateKIM, Hong-Yeol; MASTRO, Michael A; HITE, Jennifer et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 58-61, issn 0022-0248, 4 p.Conference Paper

Structural properties of the epitaxial CuCr_0.95Mg_0.05O₂ thin films on c-plane sapphire substrates by pulsed laser depositionKIM, Se-Yun; SUNG, Sang-Yun; JO, Kwang-Min et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 9-13, issn 0022-0248, 5 p.Conference Paper